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| KYW25A05 ... KYW25A6, KYW25K05 ... KYW25K6 KYW25A05 ... KYW25A6, KYW25K05 ... KYW25K6 Silicon-Press-Fit-Diodes - High Temperature Diodes Silizium-Einpress-Dioden - Hochtemperatur-Dioden Version 2006-04-20 O 16 0.5 Nominal Current Nennstrom 25 max. 25 A 50 ... 600 V Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal press-fit case with glass seal Metall-Einpressgehause mit Glas-Durchfuhrung Weight approx. Gewicht ca. Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton 1.3 10 g 6.6 0.5 0.5 Dimensions - Mae [mm] Maximum ratings Type / Typ Wire to / Draht an Anode KYW25A05 KYW25A1 KYW25A2 KYW25A3 KYW25A4 KYW25A6 Cathode KYW25K05 KYW25K1 KYW25K2 KYW25K3 KYW25K4 KYW25K6 Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 300 400 600 TC = 100C f > 15 Hz TA = 25C TA = 25C IFAV IFRM IFSM i2t Tj TS 1.5 O 12.770.04 4 Grenzwerte Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 60 120 240 360 480 700 25 A 90 A 1) 270/300 A 375 A2s -50...+175C -50...+175C Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stostrom fur eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur 1 Max. case temperature TC = 150C - Max. Gehausetemperatur TC = 150C http://www.diotec.com/ (c) Diotec Semiconductor AG 1 KYW25A05 ... KYW25A6, KYW25K05 ... KYW25K6 Characteristics Forward Voltage Durchlass-Spannung Leakage Current Sperrstrom Thermal Resistance Junction - Case Warmewiderstand Sperrschicht - Gehause Tj = 25C IF = 25 A VF Kennwerte < 1.1 V Tj = 25C VR = VRRM IR RthC < 100 A < 1 K/W 120 [%] 100 103 [A] 102 Tj = 125C 80 10 Tj = 25C 60 40 1 20 IFAV 0 0 TC 50 100 150 [C] Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehausetemp. IF 10-1 270a-(25a-1,1v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 10 3 [A] 10 2 iF 10 1 10 10 [n] 10 Peak forward surge current versus number of cycles at 50 Hz Durchlass-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz 2 3 (c) Diotec Semiconductor AG http://www.diotec.com/ 2 |
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